2SJ322 silicon p-channel mos fet november 1996 application high speed power switching features low on-resistance high speed switching low drive current 4 v gate drive device can be driven from 5 v source suitable for switching regulator, dc-dc converter avalanche ratings outline 1 2 3
to-220cfm 1. gate
2. drain
3. source d g s
2SJ322 2 absolute maximum ratings (ta = 25c) item symbol ratings unit drain to source voltage v dss C60 v gate to source voltage v gss 20 v drain current i d C20 a drain peak current i d(pulse) * 1 C80 a body to drain diode reverse drain current i dr C20 a avalanche current i ap * 3 C20 a avalanche energy e ar * 3 34 mj channel dissipation pch* 2 35 w channel temperature tch 150 c storage temperature tstg C55 to +150 c notes 1. pw 10 s, duty cycle 1% 2. value at t c = 25c 3. value at tch = 25c, rg 3 50 w
2SJ322 3 electrical characteristics (ta = 25c) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss C60 v i d = C10 ma, v gs = 0 gate to source breakdown voltage v (br)gss 20v i g = 100 a, v ds = 0 gate to source leak current i gss 10 a v gs = 16 v, v ds = 0 zero gate voltage drain current i dss C250 a v ds = C50 v, v gs = 0 gate to source cutoff voltage v gs(off) C1.0 C2.25 v i d = C1 ma, v ds = C10 v static drain to source on state r ds(on) 0.05 0.065 w i d = C10 a, v gs = C10 v* 1 resistance 0.07 0.095 w i d = C10 a, v gs = C4 v* 1 forward transfer admittance |y fs | 1016 s i d = C10 a, v ds = C10 v* 1 input capacitance ciss 2200 pf v ds = C10 v, v gs = 0, output capacitance coss 1000 pf f = 1 mhz reverse transfer capacitance crss 300 pf turn-on delay time t d(on) 25nsi d = C10 a, v gs = C10 v, rise time t r 130 ns r l = 3 w turn-off delay time t d(off) 320 ns fall time t f 210 ns body to drain diode forward voltage v df C1.1v i f = C20 a, v gs = 0 body to drain diode reverse recovery time t rr 160 ns i f = C20 a, v gs = 0, di f /dt = 50 a/s note 1. pulse test see characteristic curve of 2sj291
2SJ322 4 40
30
20
10 0 channel dissipation pch (w) 50 100 150 200 case temperature tc (?) power vs. temperature derating drain to source voltage v (v) ds drain current i (a) d ? ?0 ?00 ? ? ?0 ?0 maximum safe operation area ?00 ?00 ?0 ?0 ?0 ? ? ? ?.2 ?.5 100 ? 10 ? 1 ms pw = 10 ms (1shot) dc operation (tc = 25 ?) operation in
this area is
limited by r ds(on) ta = 25 ? 3 1 0.3 0.1 0.03 0.01 10 100 1 m 10 m pulse width pw (s) normalized transient thermal impedance 100 m 1 10 s (t) g dm p pw t d = pw t ch ?c(t) = s (t) ? ch ?c
ch ?c = 3.57 ?/w, tc = 25 ? q g q q tc = 25? d = 1 0.5 0.2 0.1 0.05 0.02 0.01 1shot pulse normalized transient thermal impedance vs. pulse width
2SJ322 5 when using this document, keep the following in mind: 1. this document may, wholly or partially, be subject to change without notice. 2. all rights are reserved: no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without hitachis permission. 3. hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the users unit according to this document. 4. circuitry and other examples described herein are meant merely to indicate the characteristics and performance of hitachis semiconductor products. hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. no license is granted by implication or otherwise under any patents or other rights of any third party or hitachi, ltd. 6. medical applications: hitachis products are not authorized for use in medical applications without the written consent of the appropriate officer of hitachis sales company. such use includes, but is not limited to, use in life support systems. buyers of hitachis products are requested to notify the relevant hitachi sales offices when planning to use the products in medical applications.
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